THIS INSTRUMENT IS NOW SCHEDULED EXCLUSIVELY THROUGH FOM: https://fom.rice.edu/fom/
This Oxford Plasmalab System 100/ICP 180 is a reactive ion etch system capable of deep etching through the use of Bosch and/or cryogenic processes. It can accommodate substrates ranging from small dies (on top of a carrier wafer) all the way up to standard 4' (100 mm) wafers with one flat. The RF generator for directed RIE plasma provides up to 300 W, and the inductively-couple plasma (ICP) generator can provide up to 3000 W. A total of 8 process gases are available: Ar, BCl3, CF4, C4F8, Cl2, N2, O2, and SF6. Wafer chuck temperature controls allow for substrate temperature ranges of 6 to 30 °C (via chiller) or down to -150 °C (or more, via liquid nitrogen). THE CRYOGENIC FEATURE IS TEMPORARILY OFFLINE, PENDING UPGRADED CRYOGENIC PIPING, ETA: Jan 2016.